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| MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY PRELIMINARY M63840P/FP/KP Notice: This is not a f inal specif ication. Some parametric limits are subject to change. 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode DESCRIPT ION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array .The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perf orm high-current driv ing with extremely low input-current supply . PIN CONFIGURATION TOP VIEW IN1 1 IN2 2 IN3 3 IN4 4 INPUT IN5 5 IN6 6 IN7 7 IN8 8 Vs 9 18 O1 17 O2 16 O3 15 O4 FEATURES High breakdown v oltage BVCEO 40V High-current driv ing IO(max)500mA With output clamping diodes Driv ing av ailable with TTL output or C-MOS IC output Wide operating temperature range (Ta= -40+85) Output current-sourcing ty pe OUTPUT 14 O5 13 O6 12 O7 11 O8 10 GND Package type 18P4G(P) APPLICATION D riv es of relay s , print ers, LEDs, f luorescent display tubes and lam ps. and interf aces between MOS-bipolar logic sy stems and relay s, solenoids, of small motors. NC 1 20 NC IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 Vs 10 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 FUNCT ION The M63840P/FP/KP each hav e eight circuits, which are made of input inv erters and current-sourcing outputs. The output are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A clamping diode is prov ided between each output and GND. Vs and GND are used commonly among the eight circuits. The inputs hav e resistance of 10k, and v oltage of up to 15V is applicable. Output current is 500mA maximum. Supply v oltage VS is 40V maximum. The M63840FP/KP is enclosed in a molded small f lat package, enabling space-sav ing design. GND Package type 20P2N-A(FP) 20P2E-A(KP) NC: No connection CIRCUIT DIAGRAM EACH CIRCUIT Vs 20K 10K 2.6K 100K 10K 5K OUTPUT GND The eight circuits share Vs and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: INPUT 1/7 Jan/'06 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ABSOLUT E MAXIMUM RATINGS (Unless otherwise noted, Ta= -40+85) Sy mbol VCEO VS VI IO IF VR Pd Topr Tstg Parameter Collector-emitter v oltage Supply v oltage Input v oltage Output current Clamping diode f orward current Clamping diode rev erse v oltage M63840P Power dissipation Operating temperature Storage temperature Ta= 25, when mounted on board M63840FP M63840KP Current per circuit output, H Output, L Conditions Ratings -0.5+40 40 -0.5+15 -500 -500 35 1.79 1.10 0.68 -40+85 -55+125 W Unit V V V mA mA V RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta= -40+85) Sy mbol VS Supply v oltage Duty Cy cle P: no more then 10% FP: no more then 5% KP: no more then 3% Duty Cy cle P: no more then 54% FP: no more then 30% KP: no more then 18% Parameter min 0 0 Limits ty p max 40 -350 mA 0 2.0 0 -100 12 0.8 V V Unit V Output current IO (Current per 1 circuit when 8 circuits are coming on simultaneously) VIH VIL "H" input v oltage "L" input v oltage ELECT RICAL CHARACTERISTICS (Unless otherwise noted, Ta= 25) Sy mbol IS(leak) VCE(sat) II IS VF IR Parameter Supply leak current Collector-emitter saturation v oltage Input current Supply current Clamping diode f orward v oltage Clamping diode rev erse current Test conditions VS= 40V, VI= 0.8V VS= 10V, VI= 2V, IO= -350mA VS= 10V, VI= 2V, IO= -100mA VI= 2.4V VI= 3.85V VS= 40V, VI= 2V (per 1 circuit) IF= 350mA VR= 40V min Limits ty p 1.7 1.5 36 180 1.3 max 100 2.0 1.8 52 260 2.5 2.0 100 mA V A Unit A V A SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta= 25) Sy mbol ton tof f Parameter Turn-on time Turn-of f time Test conditions CL= 15pF (note 1) Limits ty p 180 2200 Unit ns ns min - max - 2/7 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode NOTE 1 TEST CIRCUIT INPUT VS 50% Measured device PG 50 RL CL OUTPUT 50% OUTPUT ton toff 50% INPUT 50% TIMING DIAGRAM (1)Pulse generator (PG) characteristics: PRR= 1KHz, tw= 10s, tr= 6ns, tf = 6ns, Zo= 50, VI= 02.4V (2)Input-output conditions RL= 100, VS= 40V (3)Electrostatic capacity CL includes f loating capacitance at connections and input capacitance at probes. TYPICAL CHARACTERIST ICS Thermal Derating Factor Characteristics 2.0 Output Saturation Voltage Output Current Characteristics -500 Vs= 10V VI= 2V -400 M63840P 1.5 M63840FP 1.0 0.931 -300 Ta= 85 -200 Ta= 25 0.572 0.354 -100 Ta= -40 M63840KP 0.5 0 0 25 50 75 85 100 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperatureTa() Output saturation voltageVCE(sat)(V) Duty-Cycle-Output Current Characteristics (M63840P) -500 Duty-Cycle-Output Current Characteristics (M63840P) -500 -400 -400 -300 -300 -200 The drain c urrent values repres ent the current per c irc uit. Repeated frequenc y 10Hz The v alue in the c irc le repres ents the v alue of the s imultaneous ly -operated c irc uit. Ta = 25 -100 -200 The drain c urrent values repres ent the current per c irc uit. Repeated frequenc y 10Hz The v alue in the c irc le repres ents the v alue of the s imultaneous ly -operated c irc uit. Ta = 85 100 -100 0 0 20 40 60 80 100 0 0 20 40 60 80 Duty cycle(%) Duty cycle(%) 3/7 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode Duty-Cycle-Output Current Characteristics (M63840FP) -500 Duty-Cycle-Output Current Characteristics (M63840FP) -500 -400 -400 -300 -300 -200 -200 The drain current values -100 The drain c urrent values repres ent the current per c irc uit. Repeated frequenc y 10Hz The v alue in the c irc le repres ents the v alue of the s imultaneous ly -operated c irc uit. Ta = 25 100 -100 represent the current per circuit. Repeated frequency 10Hz The value in the circle represents the value of the simultaneously-operated circuit. Ta = 85 0 0 20 40 60 80 0 80 100 0 20 40 60 Duty cycle(%) Duty cycle(%) Duty-Cycle-Output Current Characteristics (M63840KP) -500 Duty-Cycle-Output Current Characteristics (M63840KP) -500 The drain c urrent v alues repres ent the c urrent per circ uit. Repeated frequenc y 10Hz The v alue in the c irc le repres ents the v alue of the s imultaneous ly operated c irc uit. Ta = 85 -400 -400 -300 -300 -200 The drain current values represent the current per circuit. Repeated frequency 10Hz The value in the circle represents the value of the simultaneously-operated circuit. Ta = 25 -200 -100 -100 80 100 0 0 20 40 60 0 0 20 40 60 80 100 Duty cycle(%) Duty cycle(%) Grounded Emitter Transfer Characteristics -500 Vs= 20V Vs-Vo= 4V -400 Ta= 85 -300 Ta= 25 -200 Ta= -40 200 300 400 500 Clamping Diode Characteristics Ta= 85 Ta= 25 -100 100 Ta= -40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.4 0.8 1.2 1.6 2.0 Input voltageVI(V) Forward bias voltageVF(V) 4/7 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode Input Characteristics 0.5 Vs= 20V 0.4 Ta= -40 0.3 Ta= 25 3 4 5 Input Characteristics Vs= 20V Ta= -40 0.2 2 Ta= 25 0.1 Ta= 85 Ta= 85 0 0 1 2 3 4 5 0 0 4 8 12 16 20 1 Input voltageVI(V) Input voltageVI(V) 5/7 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode 6/7 MITSUBISHI SEMICONDUCTOR TRANSISTOR ARRAY M63840P/FP/KP 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode 7/7 |
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